Reflectance anisotropies of polycrystalline Ce1-xGdxO2-x/Si(001) interfaces

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2FCZ______%3A_____%2F23%3AN0000049" target="_blank" >RIV/CZ______:_____/23:N0000049 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S016943322301841X?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S016943322301841X?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2023.158161" target="_blank" >10.1016/j.apsusc.2023.158161</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Reflectance anisotropies of polycrystalline Ce1-xGdxO2-x/Si(001) interfaces

Popis výsledku v původním jazyce

Ce1-xGdxO2-x/2 thin films were deposited by spin coating on oxidized Si(001) substrates. Two strain regimes are observed by mu- Raman spectroscopy: for x < 0.1 the films are tensile strained, whereas a strain component of the wave number shift of -71.2x cm(-1) compensates with a 32.6x cm(-1) bond component for x > 0.1. Reflectance anisotropy spectroscopy (RAS) measurements were carried out on these films in which interface-related optical anisotropies signatures appearing in the 1.5 eV to 3.6 eV photon energy range are found dependent on the incorporation of Gd in the lattice. To explain the observed RAS signatures with a complex reflectance three-phase model, we resorted to spectroscopic ellipsometry (SE) to retrieve the interface optical anisotropies (IOA) related to the changes in refractive index, < Delta n >, between interface formed by both the oxidized Si(001) and polycrystalline CeO2:Gd films, and to assess the CeO2 energy gap variation from 3.2 to 2.8 eV in the 0 < x < 0.4 composition range. This study renders the combination of RAS, Raman, and SE versatile tools to optimize the growth parameters during the fabrication of devices based on polycrystalline CeO2 on a quantitative basis.

Název v anglickém jazyce

Reflectance anisotropies of polycrystalline Ce1-xGdxO2-x/Si(001) interfaces

Popis výsledku anglicky

Ce1-xGdxO2-x/2 thin films were deposited by spin coating on oxidized Si(001) substrates. Two strain regimes are observed by mu- Raman spectroscopy: for x < 0.1 the films are tensile strained, whereas a strain component of the wave number shift of -71.2x cm(-1) compensates with a 32.6x cm(-1) bond component for x > 0.1. Reflectance anisotropy spectroscopy (RAS) measurements were carried out on these films in which interface-related optical anisotropies signatures appearing in the 1.5 eV to 3.6 eV photon energy range are found dependent on the incorporation of Gd in the lattice. To explain the observed RAS signatures with a complex reflectance three-phase model, we resorted to spectroscopic ellipsometry (SE) to retrieve the interface optical anisotropies (IOA) related to the changes in refractive index, < Delta n >, between interface formed by both the oxidized Si(001) and polycrystalline CeO2:Gd films, and to assess the CeO2 energy gap variation from 3.2 to 2.8 eV in the 0 < x < 0.4 composition range. This study renders the combination of RAS, Raman, and SE versatile tools to optimize the growth parameters during the fabrication of devices based on polycrystalline CeO2 on a quantitative basis.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

639

Číslo periodika v rámci svazku

34

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

158161(1-7)

Kód UT WoS článku

001092032600001

EID výsledku v databázi Scopus

2-s2.0-85167818708