Filtry
Hybrid detector based on MOVPE grown InGaN/GaN MQW + BGO
InGaN/GaN MQW structures for scintillators grown by MOVPE were prepared, measured and optimized. Exciton and defect PL bands, as well as PL kinetics, were measured. Design and construction of a hybrid InGaN/GaN...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2023 •
- D •
- Odkaz
Rok uplatnění
D - Stať ve sborníku
Výsledek na webu
Hybrid detector based on MOVPE grown InGaN/GaN MQW + BGO
The work focus on description of MOVPE InGaN/GaN MQW scintillation structures or alpha, beta or proton particles. Preparation, properties and problems of MOVPE InGaN/GaN scintillators with MQW str...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2022 •
- O
Rok uplatnění
O - Ostatní výsledky
A hybrid detector based on MOVPE-grown InGaN/GaN multiple quantum wells with BGO scintillator layers
particles. MOVPE InGaN/GaN MQW scintillation structures were prepared and studied. The highest distance of two adjacent QWs ought to be lower than diffusion length of GaN exciton. We have realized alternative solu...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2024 •
- Jost •
- Odkaz
Rok uplatnění
Jost - Ostatní články v recenzovaných periodicích
Výsledek na webu
Compensation of strain in InGaN/GaN QWs by AlGaN layer
This work deals with modeling bandedges of a AlGaN layer for minimising carrier capture in potential holes that are emerging due to polarisation at interfaces of AlGaN and GaN....
Condensed matter physics (including formerly solid state physics, supercond.)
- 2022 •
- O
Rok uplatnění
O - Ostatní výsledky
MOVPE growth of InGaN/GaN MQW nitride scintillator structure
morphological problem of the InGaN/GaN MQWs is formation of V-pits. These V-pits originate in InGaN QWs and they are created due to dislocations. InGaN/GaN structures with a different number of QWs and di...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2017 •
- O
Rok uplatnění
O - Ostatní výsledky
InGaN/GaN multiple quantum well structures for scintillator application
Scintillator InGaN/GaN QW structure was prepared by MOVPE. The structure reported is a promising candidate for fast scintillator applications: the scintillation response characteristics are better compared to the currently ...
BM - Fyzika pevných látek a magnetismus
- 2015 •
- O
Rok uplatnění
O - Ostatní výsledky
Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells
The InGaN multiple quantum wells (MQW) samples with the undoped and Si doped GaN barriers were grown by Metal Organic Vapour Phase Epitaxy (MOVPE). By comparing defects-related emission bands in the undoped GaN and...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2022 •
- D •
- Odkaz
Rok uplatnění
D - Stať ve sborníku
Výsledek na webu
Preparation of functional InGaN/GaN heterostructure on sapphire substrate
Certified technology describes in detail preparation of InGaN/GaN scintillation heterostructure suitable for production of fast scintillating shield for electron detection. The set of documents consist of regalement, 26 work instruc...
Optics (including laser optics and quantum optics)
- 2020 •
- Ztech
Rok uplatnění
Ztech - Ověřená technologie
Photoluminescence of InGaN/GaN MQW structures – technological aspects
In this work results obtained on several types of InGaN/GaN multiple quantum well (MQW) scintillator structures are presented. Luminescence properties of scintillator structures with different number of QWs and different growth rate...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- D
Rok uplatnění
D - Stať ve sborníku
Technology of preparation of thick InGaN/GaN layers
Certified technology describes in detail preparation of InGaN/GaN scintillation heterostructure suitable for production of fast scintillating shield for electron detection. The set of documents consists of the main file, 25 work ins...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2024 •
- Ztech
Rok uplatnění
Ztech - Ověřená technologie
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