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1 325 (0,081s) •

Projekt

*Single Crystal Sapphire Protection Caps for Extreme Process Conditions (FI-IM5/045)

*Sapphire is a single crystal, unlike any ceramics consisting of many sintered grains. Since the grain boundary is a weak point and the place of corrosion, sapphire. The project aims on development of new products using this sap...

JB - Senzory, čidla, měření a regulace

  • 2008 - 2010
    • •
  • 6 377 tis. Kč
    • •
  • 3 065 tis. Kč
    • •
  • MPO
Projekt

Study of ultrafast phenomena in solids I. soft mode dynamics near structural phase transitions, II. carrier relaxation dynamics in GaAs structures (GA202/96/0447)

The project will be focused on the real-time investigation of the ultrafast processes in solids. An existing Ti-Sapphire laser system providing 50 fs pulses will serve as a light source for the experiments. The four-wave mixing pump-probe in...

BM - Fyzika pevných látek a magnetismus

  • 1996 - 1998
    • •
  • 3 769 tis. Kč
    • •
  • 2 649 tis. Kč
    • •
  • GA ČR
Projekt

Endodontic treatmant using Er YAG laser sterilization (NK5016)

of optical sapphire endings and tips.The Er:YAG laser system will emit et 2.94um...

FP - Ostatní lékařské obory

  • 1998 - 2000
    • •
  • 3 372 tis. Kč
    • •
  • 2 730 tis. Kč
    • •
  • MZ
Projekt

PALS-RI 3 (EH23_015/0008188)

The goal of the project is to modernize and upgrade RI PALS in such a way that it maintains high-quality operation of synchronized power laser systems in the long term and improves services to users in the Open Access mode. This is mainly the moderni...

Fluids and plasma physics (including surface physics)

  • 2024 - 2027
    • •
  • 50 000 tis. Kč
    • •
  • 12 650 tis. Kč
    • •
  • MŠMT
Projekt

Preparation and application of the AIII-nitride epitaxial layers for optical wavequides and sensor structures distillation columns design (GA104/00/0572)

-nitride layers on the sapphire and silicon substrates will be prepared by the MOVPE...

JA - Elektronika a optoelektronika, elektrotechnika

  • 2000 - 2002
    • •
  • 3 069 tis. Kč
    • •
  • 2 147 tis. Kč
    • •
  • GA ČR
Projekt

Study of combined PLD with r.f. discharges for improvement of optic layers properties (GP106/01/D017)

optical layers. Attention will be paid to waveguiding layers like Ti :sapphire, YAG...

BL - Fyzika plasmatu a výboje v plynech

  • 2001 - 2004
    • •
  • 1 092 tis. Kč
    • •
  • 612 tis. Kč
    • •
  • GA ČR
Projekt

Investigation of Lead Iodide for X-ray Detection (GC104/08/J025)

sapphire nucleus will be used to achieve the growth in the required direction...

JJ - Ostatní materiály

  • 2008 - 2010
    • •
  • 3 746 tis. Kč
    • •
  • 3 746 tis. Kč
    • •
  • GA ČR
Projekt

Centre of Laser Plasma (LC528)

of Ti-Sapphire laser, the hybrid laser SOFIA, z-pinch and other devices including...

BH - Optika, masery a lasery

  • 2005 - 2011
    • •
  • 275 947 tis. Kč
    • •
  • 129 157 tis. Kč
    • •
  • MŠMT
Projekt

Electronic Performance Enhancement of Diamond-GaN Hybrid Structures Using Engineered Strains (GP14-16549P)

This project focuses on fundamental understanding of the diamond growth (DG) on GaN substrates (AlGaN/GaN on Si or sapphire, and metal contacts). Different nucleation and seeding methods will be employed to initialize the DG. The DG will be ...

BM - Fyzika pevných látek a magnetismus

  • 2014 - 2016
    • •
  • 2 026 tis. Kč
    • •
  • 2 026 tis. Kč
    • •
  • GA ČR
Projekt

Tunable x-ray source from laser plasma accelerator for high energy phase contrast radiography (GA15-03118S)

. The development will be carried out at 25TW femtosecond Ti: sapphire laser system at join...

BF - Elementární částice a fyzika vysokých energií

  • 2015 - 2017
    • •
  • 5 770 tis. Kč
    • •
  • 5 770 tis. Kč
    • •
  • GA ČR
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