Optical and tactile measurements on SiC sample defects

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00177016%3A_____%2F24%3AN0000139" target="_blank" >RIV/00177016:_____/24:N0000139 - isvavai.cz</a>

Result on the web

<a href="https://jsss.copernicus.org/articles/13/109/2024/" target="_blank" >https://jsss.copernicus.org/articles/13/109/2024/</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.5194/jsss-13-109-2024" target="_blank" >10.5194/jsss-13-109-2024</a>

Result language

angličtina

Original language name

Optical and tactile measurements on SiC sample defects

Original language description

In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. In addition to the identification and classification of defects, such a future hybrid analysis could also include characterizations, e.g. further evaluation of ellipsometric data by using numerical simulations.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

21100 - Other engineering and technologies

Project

<a href="/en/project/8B21006" target="_blank" >8B21006: Traceability of localised functional properties of nanostructures with high speed scanning probe microscopy</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2024

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Sensors and Sensor Systems

ISSN

—

e-ISSN

2194-878X

Volume of the periodical

13

Issue of the periodical within the volume

1

Country of publishing house

DE - GERMANY

Number of pages

13

Pages from-to

109-121

UT code for WoS article

001228710300001

EID of the result in the Scopus database

2-s2.0-85194176064