Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10057200" target="_blank" >RIV/00216208:11320/10:10057200 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate
Original language description
We studied the structure and charge trapping in volumes of Ge quantum dots in bilayers (Ge+SiO2)/SiO2 grown on rippled substrates
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/7E08093" target="_blank" >7E08093: Nanostructured Magnetic Materials for Nano-spintronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
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Volume of the periodical
97
Issue of the periodical within the volume
16
Country of publishing house
US - UNITED STATES
Number of pages
3
Pages from-to
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UT code for WoS article
000283502100073
EID of the result in the Scopus database
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