All
All

What are you looking for?

All
Projects
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates

Result description

Due to the development and growing demends for inplantation techniques, the laser plasma as a source of multiply charged ions been investigated. This experiment concerned the characterization and optimization of laser produced Ge ion fluxes as well as the analysis of the direct implantation of these ions into SiO2 films prepared on the surface of a Si single crystal in the bulk profiles of Ge ion implantation with maximum depth of similar to 450 nm

Keywords

laser plasmaGe ionsion implantation

The result's identifiers

Alternative languages

  • Result language

    angličtina

  • Original language name

    Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates

  • Original language description

    Due to the development and growing demends for inplantation techniques, the laser plasma as a source of multiply charged ions been investigated. This experiment concerned the characterization and optimization of laser produced Ge ion fluxes as well as the analysis of the direct implantation of these ions into SiO2 films prepared on the surface of a Si single crystal in the bulk profiles of Ge ion implantation with maximum depth of similar to 450 nm

  • Czech name

    Přímá implantace Ge iontů, produkovaných laserovými pulsy o velké energii a nízké intensitě, do SiO2 vrstev na Si podložkách

  • Czech description

    Vzhledem k vývoji a rostoucím požadavkům na implantační techniky bylo zkoumáno laserové plazma jako zdroj vícenásobných iontů. Experimenty zahrnují stanovení charakteristik a optimalizaci toku laserem produkovaných Ge iontů a analysy přímé implantace těchto iontů do SiO2 vrstev na povrchu Si krystalu|. Objemový profil implantovaných Ge iontů má maximální hloubku 450 nm

Classification

  • Type

    Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BH - Optics, masers and lasers

  • OECD FORD branch

Result continuities

Others

  • Publication year

    2006

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Physica Scripta

  • ISSN

    0031-8949

  • e-ISSN

  • Volume of the periodical

    T123

  • Issue of the periodical within the volume

    -

  • Country of publishing house

    SE - SWEDEN

  • Number of pages

    4

  • Pages from-to

    148-181

  • UT code for WoS article

  • EID of the result in the Scopus database

Result type

Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

Jx

CEP

BH - Optics, masers and lasers

Year of implementation

2006