Charge transport in silicon nanocrystal superlattices in the terahertz regime

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10314723" target="_blank" >RIV/00216208:11320/15:10314723 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/15:00448983

Result on the web

<a href="http://dx.doi.org/10.1103/PhysRevB.91.195443" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.91.195443</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.91.195443" target="_blank" >10.1103/PhysRevB.91.195443</a>

Result language

angličtina

Original language name

Charge transport in silicon nanocrystal superlattices in the terahertz regime

Original language description

Silicon nanocrystals prepared by thermal decomposition of silicon-rich 2-5-nm-thick SiOx layers (0.64 <= x <= 1) are investigated using time-resolved terahertz spectroscopy. The samples consist of a superlattice of isolated monolayers composed of Si nanocrystals with controlled variable size and filling fraction. Experiments with variable optical pump fluence over almost two orders of magnitude allow us to determine the depolarization fields in the structure. Careful consideration of the local fields along with Monte Carlo calculations of the microscopic conductivity of Si nanocrystals supported by structural characterization of the samples provide detailed information about the electrical connectivity of nanocrystals and about the charge transport among them. Well below the percolation threshold, nanocrystals grow mostly isolated from each other. In thicker or in more Si-enriched layers, nanocrystals merge during their growth and form tens-of-nanometer-sized photoconducting Si structu

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GA13-12386S" target="_blank" >GA13-12386S: Photoconductivity and dynamics of excitations in nanostructured and disordered semiconductors on ultrafast time scale</a><br>

Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physical Review B - Condensed Matter and Materials Physics

ISSN

1098-0121

e-ISSN

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Volume of the periodical

91

Issue of the periodical within the volume

19

Country of publishing house

US - UNITED STATES

Number of pages

10

Pages from-to

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UT code for WoS article

000355170900003

EID of the result in the Scopus database

2-s2.0-84930946452