Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10370561" target="_blank" >RIV/00216208:11320/17:10370561 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.mee.2017.05.050" target="_blank" >http://dx.doi.org/10.1016/j.mee.2017.05.050</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mee.2017.05.050" target="_blank" >10.1016/j.mee.2017.05.050</a>

Result language
angličtina
Original language name
Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers
Original language description
In this work, the technology of the metal-insulator-semiconductor (MIS) structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) dielectric layer is presented. The results of structural and electrical characterization of the fabricated test structures are discussed. A good agreement between measurements of thickness of the Si-NC layers for the spectroscopic ellipsometry and AFM methods was obtained. The spectroscopic analysis demonstrated a presence of Si-NCs of optical properties similar to the monocrystalline silicon. A simulation of the capacitance-voltage-time and current-voltage-time characteristics gave results of a qualitative agreement with the measurement data. Comparative stress-and-sense measurements (I-t) for the MIS structures with and without silicon nanocrystals proved the essential difference resulting from the charging/discharging processes of the nanocrystals.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/8F15001" target="_blank" >8F15001: Nanophotonics with metal – group-IV-semiconductor nanocomposites: From single nanoobjects to functional ensembles</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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