Oxidation behavior of Cu nanoparticles embedded into semiconductive TiO2 matrix
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10319610" target="_blank" >RIV/00216208:11320/15:10319610 - isvavai.cz</a>
Alternative codes found
RIV/60076658:12310/15:43888689 RIV/68378271:_____/15:00510812
Result on the web
<a href="http://dx.doi.org/10.1016/j.tsf.2015.07.026" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2015.07.026</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2015.07.026" target="_blank" >10.1016/j.tsf.2015.07.026</a>
Alternative languages
Result language
angličtina
Original language name
Oxidation behavior of Cu nanoparticles embedded into semiconductive TiO2 matrix
Original language description
Metal nanoparticles embedded into a semiconductive matrix represent a promising material for widely sought advanced technological applications. We focused our interest on the preparation of TiO2 matrix with embedded Cu nanoparticles. In particular, we studied the effect of reactive discharge (Ar/O-2) exposition on copper oxidation, which can result in two stable forms: cuprous oxide (Cu2O) and cupric oxide (CuO). Copper nanoparticles, of size in range 10-50 nm, were produced by magnetron sputtering in combination with gas aggregation. The beam of Cu nanoparticles was impinging onto a silicon substrate which was directly exposed to a reactive Ar/O-2 magnetron discharge providing sputtering of Ti target at the same time. The properties of deposited nanocomposite Cu(O-x)-TiO2 were investigated by X-ray photoelectron spectroscopy, grazing incidence X-ray diffractometry, X-ray reflectometry and scanning electron microscopy techniques to reveal the nanocomposite properties and to understand
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP108%2F12%2F2104" target="_blank" >GAP108/12/2104: Advanced semiconductor materials for photoelectrochemical water splitting</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
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Volume of the periodical
589
Issue of the periodical within the volume
Aug
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
8
Pages from-to
864-871
UT code for WoS article
000360320000136
EID of the result in the Scopus database
2-s2.0-84940062502