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High frequency noise calculation in Schottky metal-semiconductor-metal structure and parameter retrieval of nanometric CdTe structure

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10384698" target="_blank" >RIV/00216208:11320/18:10384698 - isvavai.cz</a>

  • Alternative codes found

    RIV/68081723:_____/18:00493520

  • Result on the web

    <a href="https://doi.org/10.1016/j.tsf.2017.10.060" target="_blank" >https://doi.org/10.1016/j.tsf.2017.10.060</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.tsf.2017.10.060" target="_blank" >10.1016/j.tsf.2017.10.060</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    High frequency noise calculation in Schottky metal-semiconductor-metal structure and parameter retrieval of nanometric CdTe structure

  • Original language description

    An analytical model to calculate the noise spectral density in Metal-Semiconductor-Metal (M-S-M) structure of Schottky contacts has been developed. The model based on the linearization of Langevin approach of carrier motion inside a bulk semiconductor, and taking into account the fluctuations in the leakage current through the structure due to the barrier lowering by the image force effect. Particularly, the calculations describe two quantities of noise: electric field and total current spectral densities. The results obtained from the Au-CdTe-Au Schottky structure exhibit sharp resonances due to the effect of plasma frequency oscillations and the relative thickness of the depletion region below the anode. Moreover, the noise current spectrum exhibits Lorentzian behavior when the M-S-M has the form of a homogenous structure (thickness of depletion region approximate to 0). These results are in agreement with that reported by Monte Carlo technique of metal Schottky structure. The discussion of the noise spectra as a function of structure parameters revealed that the nanometric M-S-M structures with undoped CdTe can be used as Schottky detectors/emitters in Terahertz frequency applications.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2018

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Thin Solid Films

  • ISSN

    0040-6090

  • e-ISSN

  • Volume of the periodical

    645

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    5

  • Pages from-to

    340-344

  • UT code for WoS article

    000418305200050

  • EID of the result in the Scopus database

    2-s2.0-85033432138