Morphological, optical and photovoltaic characteristics of MoSe2/SiOx/Si heterojunctions

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F20%3A10423242" target="_blank" >RIV/00216208:11320/20:10423242 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=d7vqz2XXST" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=d7vqz2XXST</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1038/s41598-020-58164-7" target="_blank" >10.1038/s41598-020-58164-7</a>

Result language
angličtina
Original language name
Morphological, optical and photovoltaic characteristics of MoSe2/SiOx/Si heterojunctions
Original language description
This work reports the effect of different processing parameters on the structural and morphological characteristics of MoSe2 layers grown by chemical vapour deposition (CVD), using MoO3 and Se powders as solid precursors. It shows the strong dependence of the size, shape and thickness of the MoSe2 layers on the processing parameters. The morphology of the samples was investigated by field emission scanning electron microscopy (FESEM) and the thickness of the deposited layers was determined by atomic force microscopy (AFM). Raman and photoluminescence (PL) spectroscopies were used to confirm the high quality of the MoSe2 layers. Surface composition was examined by photoelectron spectroscopy (XPS). Moreover, the MoSe2/SiOx/Si heterojunctions exhibit diode behaviour, with a rectification ratio of 10, measured at +/- 2.0V, which is due to the p-i-n heterojunctions formed at the p-Si/SiOx/MoSe2 interface. A photovoltaic effect was observed with a short circuit current density (J(sc)), open circuit voltage (V-OC) and efficiency of -0.80mA/cm(2), 1.55V and 0.5%, respectively. These results provide a guide for the preparation of p-i-n heterojunctions based on few-layer MoSe2 with improved photovoltaic response.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)

Project
<a href="/en/project/LM2018116" target="_blank" >LM2018116: Surface Physics Laboratory - Materials Science Beamline</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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