Optical Characterization of Ultrananocrystalline Diamond Films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F08%3A00024370" target="_blank" >RIV/00216224:14310/08:00024370 - isvavai.cz</a>

Alternative codes found

RIV/00177016:_____/08:#0000298

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Optical Characterization of Ultrananocrystalline Diamond Films

Original language description

Optical properties of the ultrananocrystalline diamond films were studied by multisample method based on the combination of variable angle spectroscopic ellipsometry and spectroscopic reflectometry applied in the range 0.6-6.5 eV. The films were deposited by PECVD in a conventional bell jar (ASTeX type) reactor using dual frequency discharge, microwave cavity plasma and radio frequency plasma inducing dc self-bias at a substrate holder. The optical model of the samples included a surface roughness described by the Rayleigh-Rice theory and a refractive index profile in which Drude approximation was used. The results conformed with the present understanding of the polycrystalline diamond growth on the silicon substrate because the existence of silicon carbide and amorphous hydrogenated carbon film between the silicon substrate and nucleation layer was proved.

Czech name

Optická charakterizace ultrananokrystalických diamantových vrstev

Czech description

Optical properties of the ultrananocrystalline diamond films were studied by multisample method based on the combination of variable angle spectroscopic ellipsometry and spectroscopic reflectometry applied in the range 0.6-6.5 eV. The films were deposited by PECVD in a conventional bell jar (ASTeX type) reactor using dual frequency discharge, microwave cavity plasma and radio frequency plasma inducing dc self-bias at a substrate holder. The optical model of the samples included a surface roughness described by the Rayleigh-Rice theory and a refractive index profile in which Drude approximation was used. The results conformed with the present understanding of the polycrystalline diamond growth on the silicon substrate because the existence of silicon carbide and amorphous hydrogenated carbon film between the silicon substrate and nucleation layer was proved.

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

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Volume of the periodical

17

Issue of the periodical within the volume

1

Country of publishing house

US - UNITED STATES

Number of pages

5

Pages from-to

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UT code for WoS article

000259598300048

EID of the result in the Scopus database

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