Application of UV Irradiation in Removal of Post-etch 193 nm Photoresist

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F09%3A00038401" target="_blank" >RIV/00216224:14310/09:00038401 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Application of UV Irradiation in Removal of Post-etch 193 nm Photoresist
Original language description
This study focused on the effect of UV irradiation on modification of polymethyl methacrylate-based photoresist, and then on wet photoresist (PR) removal of patterned structure (single damascene structure). Three single-wavelength UV sources were considered for PR treatment, with lambda = 172, 222, and 283 nm. Modification of blanket PR was characterized using Fourier-transform infrared spectroscopy (FTIR; chemical change), spectroscopic ellipsometry (SE; thickness change), and dissolution in organic solvent (solubility change). While for patterned samples, scanning electron microscopy (SEM) was used for evaluation of cleaning efficiency. In comparison to 172 nm, the PR film irradiated by 222 nm and 283 nm photons resulted in formation of higher concentration in C=C bond. Immersion tests using pure N-methyl pyrrolidone (NMP) at 60 C for 2 min showed that some improvement in PR removal was only observed for PR films treated by 283 nm UV for short irradiation times.
Czech name
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Czech description
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Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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