Monitoring and control of RF driven PVD, PECVD and etching plasmas using Fourier components of discharge voltages
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F12%3A00057727" target="_blank" >RIV/00216224:14310/12:00057727 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Monitoring and control of RF driven PVD, PECVD and etching plasmas using Fourier components of discharge voltages
Original language description
PVD and PECVD require monitoring and control of the deposition process in order to reproducibly prepare coatings of desired quality. RF driven magnetron sputtering as well as RF driven PECVD processes use capacitively coupled plasma to deposit various types of thin films. Due to the nonlinearity of sheaths, higher harmonics of discharge voltage and current are produced in capacitive discharges. Since the sheaths are in contact with bulk plasma, higher harmonics are strong in particular when their frequencies are close to the series plasma?sheath resonance. Also, the harmonics are strong when they are not damped by collisions between electrons and neutrals. Both conditions are fulfilled at pressures typically below 10 Pa used in majority of PVD and PECVD applications. Fourier components of discharge voltages were measured in two different reactive plasmas and their response to creation or destruction of a thin film was studied.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů