Nano-modification of Si-wafer surfaces using low-cost ambient air diffuse plasma

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F15%3A00086982" target="_blank" >RIV/00216224:14310/15:00086982 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1504/IJNM.2015.075226" target="_blank" >http://dx.doi.org/10.1504/IJNM.2015.075226</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1504/IJNM.2015.075226" target="_blank" >10.1504/IJNM.2015.075226</a>

Result language
angličtina
Original language name
Nano-modification of Si-wafer surfaces using low-cost ambient air diffuse plasma
Original language description
In this paper, we demonstrated the cleaning and nano-oxidation of Si-wafer surfaces by atmospheric pressure plasma, generated in ambient air using diffuse coplanar surface barrier discharge. Plasma treatment for one second resulted in a significant reduction of water contact angle. The increase in wettability was observed and explained by chemical changes on the analysed Si-wafer surfaces. These changes were analysed by X-ray photoelectron spectroscopy which showed a considerable decrease in the presence of carbon and a significant increase of oxygen on the analysed surfaces.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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