PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F18%3A00106417" target="_blank" >RIV/00216224:14310/18:00106417 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

PREPARATION OF [001] ORIENTED TITANIUM THIN FILM FOR MEMS APPLICATIONS BY KAUFMAN ION-BEAM SOURCE

Original language description

We propose the sputtering deposition providing titanium thin films with controlled properties such as preferential crystallography and residual stress using Kaufman ion-beam source. The titanium thin films with thickness of approximate to 80 nm were deposited on [001] Si wafer covered by SiO2 deposited by plasma-enhanced chemical vapor deposition. To achieve the required crystallography and stress properties, we investigated the different beam voltage of Kaufman ion-beam source and controlled the substrate temperature during deposition using a built-in heater. We used two X-ray diffraction methods to determine the planes parallel to the sample surface and residual stress. We also measured the current-voltage curves to determine the resistivity (rho) and the thermal coefficient of resistivity (alpha) of titanium thin films at different substrate temperatures using 4-probe measurement setup. We showed that it is possible to prepare stress-free titanium thin films with pure [001] orientation at the lowest beam voltage of 200 V and substrate temperature of approximate to 273 degrees C. The corresponding lattice parameters a(0) and c(0) were (2.954 +/- 0.003) angstrom and (4.695 +/- 0.001) angstrom, respectively. Electrical parameters of this sample as rho and alpha were (9.2 +/- 0.1).10(-7) Omega.m and (2.6 +/- 0.2).10(-3) K-1, respectively. We found out that these layers are well suitable for micro-electro-mechanical systems where the pure [001] orientation, no residual stress and low rho and high alpha are essential. We found that rho and a are dependent on each other. The rho value was approximate to 2x higher than the bulk material value, which is an excellent result for a thin film with the thickness of approximate to 80 nm.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH &amp; APPLICATION (NANOCON 2017)

ISBN

9788087294819

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

117-122

Publisher name

TANGER LTD

Place of publication

SLEZSKA

Event location

Brno, CZECH REPUBLIC

Event date

Jan 1, 2017

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

000452823300018