Preparation of [001] Oriented Titanium Thin Film for MEMS Applications by Kaufman Ion-beam Source

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU124810" target="_blank" >RIV/00216305:26620/17:PU124810 - isvavai.cz</a>

Result on the web

<a href="https://nanocon2018.tanger.cz/files/uploads/01/NANOCON2017_Proceedings_content.pdf" target="_blank" >https://nanocon2018.tanger.cz/files/uploads/01/NANOCON2017_Proceedings_content.pdf</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Preparation of [001] Oriented Titanium Thin Film for MEMS Applications by Kaufman Ion-beam Source

Original language description

We propose the sputtering deposition providing titanium thin films with controlled properties such as preferential crystallography and residual stress using Kaufman ion-beam source. The titanium thin films with thickness of ≈ 80 nm were deposited on [001] Si wafer covered by SiO2 deposited by plasma-enhanced chemical vapor deposition. To achieve the required crystallography and stress properties, we investigated the different beam voltage of Kaufman ion-beam source and controlled the substrate temperature during deposition using a built-in heater. We used two X-ray diffraction methods to determine the planes parallel to the sample surface and residual stress. We also measured the current-voltage curves to determine the resistivity (ρ) and the thermal coefficient of resistivity (α) of titanium thin films at different substrate temperatures using 4-probe measurement setup. We showed that it is possible to prepare stress-free titanium thin films with pure [001] orientation at the lowest beam voltage of 200 V and substrate temperature of ≈ 273 °C. The corresponding lattice parameters a0 and c0 were (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. Electrical parameters of this sample as ρ and α were (9.2 ± 0.1)∙10-7 Ω∙m and (2.6 ± 0.2)∙10-3 K-1, respectively. We found out that these layers are well suitable for micro-electro-mechanical systems where the pure [001] orientation, no residual stress and low ρ and high α are essential. We found that ρ and α are dependent on each other. The ρ value was ≈ 2× higher than the bulk material value, which is an excellent result for a thin film with the thickness of ≈ 80 nm.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

21001 - Nano-materials (production and properties)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of 9 th International conference Nanocon 2017

ISBN

978-80-87294-59-8

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

117-122

Publisher name

Tanger

Place of publication

Ostrava

Event location

Brno

Event date

Oct 18, 2017

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000452823300018