Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F25%3A00140720" target="_blank" >RIV/00216224:14310/25:00140720 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1016/j.surfcoat.2025.131865" target="_blank" >https://doi.org/10.1016/j.surfcoat.2025.131865</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.surfcoat.2025.131865" target="_blank" >10.1016/j.surfcoat.2025.131865</a>

Result language

angličtina

Original language name

Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering

Original language description

This research aims to study the structure, chemical composition, and dielectric strength of aluminum tantalum oxide (AlxTayOz) thin films deposited on silicon and steel substrates by pulsed direct current reactive magnetron sputtering. Four targets containing different concentrations of aluminum and tantalum are sputtered in an argon-oxygen atmosphere to produce ternary oxide thin films of AlxTayOz. Argon flow is maintained at 60 sccm during the depositions, and several oxygen flows ranging from 5.0 to 39.6 sccm are studied. The change in oxygen flow rate modifies the structure, chemical composition, and dielectric strength of the deposited oxide thin films. The deposition rate of the films is impacted as well. All these properties are also studied for aluminum oxide (AlxOz) and tantalum oxide (TayOz) thin films deposited in the same experimental conditions as a reference. The binary and ternary oxide thin films are dense, uniform, and poorly crystalline. The concentrations of aluminum, tantalum, and oxygen in the thin films depend on both the sputtered target composition and the oxygen flow utilized during deposition. The dielectric strength of the thin films is also oxygen flow dependent. Intermediate oxygen flows are the most efficient to produce AlxTayOz thin films with high dielectric strengths. The highest dielectric strength of 340 +/- 50 V center dot mu m-1 was obtained for 80 at.% Al/20 at.% Ta target composition and 20 sccm O2 flow. The experimental results show that the increased tantalum content in the sputtered target mitigates the effect of poisoning and arcing and increases the deposition rate of AlxTayOz thin films.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10305 - Fluids and plasma physics (including surface physics)

Project

<a href="/en/project/FW06010462" target="_blank" >FW06010462: Thin-film strain gauge with high sensitivity and durability prepared by magnetron sputtering</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Surface and Coatings Technology

ISSN

0257-8972

e-ISSN

1879-3347

Volume of the periodical

498

Issue of the periodical within the volume

February

Country of publishing house

CH - SWITZERLAND

Number of pages

12

Pages from-to

1-12

UT code for WoS article

001419678800001

EID of the result in the Scopus database

2-s2.0-85216462344