Study of thin SiOx film deposition by DBD at the atmospheric pressure

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00180976" target="_blank" >RIV/68407700:21230/11:00180976 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Study of thin SiOx film deposition by DBD at the atmospheric pressure

Original language description

Our contribution takes a step towards the transfer of the well proven plasma enchased chemical vapour deposition (PE CVD) method into the atmospheric pressure region and discusses possible application of DBD sustaining in argon with admixture of hexamethyldisiloxane (HMDSO) and oxygen for deposition of SiOx thin films. Films were deposited on polystyrene substrates. The relations between thin film parameters and deposition process conditions were studied. Our research focused on influence of surface morphology and chemical composition in dependence on working parameters. We concentrated on connection between concentration of the organosilicon reagent transported by the argon flow into the discharge region, concentration of the oxygen in the discharge atmosphere and surface properties of SiOx thin films.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BL - Plasma physics and discharge through gases

OECD FORD branch

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Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Acta Technica CSAV

ISSN

0001-7043

e-ISSN

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Volume of the periodical

56

Issue of the periodical within the volume

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Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

9

Pages from-to

"T388"-"T396"

UT code for WoS article

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EID of the result in the Scopus database

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