Origin of the metastability of phosphorus or boron doped a-Si:H films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14410%2F00%3A00005993" target="_blank" >RIV/00216224:14410/00:00005993 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Origin of the metastability of phosphorus or boron doped a-Si:H films

Original language description

The effects of light-soaking on either phosphorus- or boron-doped a-Si:H films were studied as functions of the doping level and the temperature. The phosphorus-doped films present a remarkable stability although lightly phosphorus-doped ones show a decrease of their conductivity by five orders of magnitude when light-soaking is performed below 40 C. This effect is attributed to the formation of P-H complexes which are stable at low temperature only. Our results suggest that in both types of doped a-Si:H films the interaction of dopants with hydrogen plays an important role.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2000

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Electronic Devices and Systems Y2K - Proceedings

ISBN

80-214-1780-3

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

207

Publisher name

ing. Zdeněk Novotný, CSc.

Place of publication

Brno

Event location

3-13 September 2000 Brno

Event date

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Type of event by nationality

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UT code for WoS article

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