Silicon-based-light-emitting materials: implanted SiO 2 films and wide bandgap a-Si:H.

Result code in IS VaVaI

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Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Silicon-based-light-emitting materials: implanted SiO 2 films and wide bandgap a-Si:H.

Original language description

The paper reviews critically the results of investigation of hydrogenated amorphous silicon (a-Si:H) and Si + - implanted SiO 2 films from the point of view of light emission applications. Wide band gap a-Si:H with the energy gap ranging from 2.0 to 2.2eV exhibits room temperature photoluminescence in the visible region.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2001

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Optical Organic and Inorganic Materials.

ISBN

0-8194-4120-1

ISSN

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e-ISSN

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Number of pages

11

Pages from-to

66-76

Publisher name

SPIE

Place of publication

Washington

Event location

Vilnius [LT]

Event date

Aug 16, 2000

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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