Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD ( plus IBAD) methods. Relationship between investigated film and substrate at indentation

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14410%2F15%3A00086919" target="_blank" >RIV/00216224:14410/15:00086919 - isvavai.cz</a>
Result on the web
<a href="http://link.springer.com/article/10.1134%2FS102319351506004X" target="_blank" >http://link.springer.com/article/10.1134%2FS102319351506004X</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1134/S102319351506004X" target="_blank" >10.1134/S102319351506004X</a>

Result language
angličtina
Original language name
Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD ( plus IBAD) methods. Relationship between investigated film and substrate at indentation
Original language description
The study of polycrystalline CeO2 + xSm(2)O(3) (x = 0, 10.9-15.9 mol %) thin films deposited by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition (IBAD) techniques on the Si substrate was devoted to the influence of deposition conditions used, namely composition x, deposition temperature T (dep) and Ar+ ion bombardment as well as the structure and (micro)structure on the (micro)hardness H using the differential hardness, Hdif, as a parameter. The investigations were made using, as in our recent papers, the depth sensing indentation (DSI) technique. The study was focused on the depth dependence of the film/substrate system response on the indentation response from the surface of films up to the film/substrate interface.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
50301 - Education, general; including training, pedagogy, didactics [and education systems]

Project
<a href="/en/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: Central european institute of technology</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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