On the mechanism of gray scale patterning of Ag-containing As2S3 thin films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F07%3A00006282" target="_blank" >RIV/00216275:25310/07:00006282 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

On the mechanism of gray scale patterning of Ag-containing As2S3 thin films

Original language description

We demonstrate an application of photo-induced silver diffusion into chalcogenide glass thin film for gray scale lithography. The gray scale chalcogenide glass mask generated in the present experiments was dry etched using reactive ion etching. The etching rate increases almost linearly with the total dose of absorbed light, thus forming the basis of gray scale lithography. Chemical composition as well as electronic structure on the surface of chalcogenide glassy film has been determined by high-resolution X-ray photoelectron spectroscopy (XPS) of the film at different stages of the patterning process. Influence of thermal annealing of chalcogenide film before Ag deposition has been investigated using scanning electron microscopy (SEM) and XPS techniques. It is observed that thermal annealing of the chalcogenide film slows the process of silver diffusion during the proposed processing procedure. A mechanism is proposed to explain the stages of gray-scale lithography based on chalcogeni

Czech name

Mechanismus tvorby 3D struktur v tenkých vrstvách Ag-As2S3

Czech description

We demonstrate an application of photo-induced silver diffusion into chalcogenide glass thin film for gray scale lithography. The gray scale chalcogenide glass mask generated in the present experiments was dry etched using reactive ion etching. The etching rate increases almost linearly with the total dose of absorbed light, thus forming the basis of gray scale lithography. Chemical composition as well as electronic structure on the surface of chalcogenide glassy film has been determined by high-resolution X-ray photoelectron spectroscopy (XPS) of the film at different stages of the patterning process. Influence of thermal annealing of chalcogenide film before Ag deposition has been investigated using scanning electron microscopy (SEM) and XPS techniques. It is observed that thermal annealing of the chalcogenide film slows the process of silver diffusion during the proposed processing procedure. A mechanism is proposed to explain the stages of gray-scale lithography based on chalcogeni

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CA - Inorganic chemistry

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2007

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Physics and Chemistry of Solids

ISSN

0022-3697

e-ISSN

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Volume of the periodical

68

Issue of the periodical within the volume

5-6

Country of publishing house

GB - UNITED KINGDOM

Number of pages

6

Pages from-to

920-925

UT code for WoS article

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EID of the result in the Scopus database

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