The Gummel-Poon Statistical Model

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F01%3APU23139" target="_blank" >RIV/00216305:26220/01:PU23139 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
The Gummel-Poon Statistical Model
Original language description
The statistical model of the bipolar transistor must include the parameter correlations and proper distributions to accurately simulate transistor performance. The contribution presents the statistical Gummel-Poon model including the correlated parameters of saturation current and forward beta to account for transistor parameters production variations. The simulation results of a correlated model show a good match of measured and simulated characteristics and confirm the fundamental role of saturation ccurrent on forward beta dependence for correlated model development.
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F00%2F0939" target="_blank" >GA102/00/0939: Integrated intelligent microsensors and microsystems</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings. Crete September 3-12, 2001. Edited by V. Musil and J.Brzobohaty.
ISBN
80-214-2027-8
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
276-281
Publisher name
Vyd. Ing. Zdeněk Novotný, Brno 2001,
Place of publication
Brno
Event location
Chania, Crete, Greece
Event date
Sep 3, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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