HSPICE Statistical Modeling

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39337" target="_blank" >RIV/00216305:26220/03:PU39337 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

HSPICE Statistical Modeling

Original language description

Since the active elements are fabricated during a common sequence of processing steps, the values of these elements are correlated. The active devices such as bipolar transistors must be completely statistically characterized to account for the model parameter interdependencies. The contribution aims to give the fundamental steps included in HSPICE active device statistical characterization. The modeling of correlations between the crucial bipolar transistor model parameters for forward active reggion is presented. The synthesis of correlated model including saturation current, forward beta and Early-effect parameter is described.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F03%2F0720" target="_blank" >GA102/03/0720: Model parameters extraction for semiconductor structures</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2003

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of the Socrates Workshop 2003

ISBN

80-214-2461-3

ISSN

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e-ISSN

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Number of pages

7

Pages from-to

136-142

Publisher name

Novotný-Brno

Place of publication

Brno

Event location

Technological Institute of Crete, Chania, Greece

Event date

Sep 22, 2003

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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