All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Bipolar transistor structure electrical characterization

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU54410" target="_blank" >RIV/00216305:26220/05:PU54410 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Bipolar transistor structure electrical characterization

  • Original language description

    The bipolar transistor model parameters extraction method based on device simulator generated electrical characteristics is presented. The forward active region electrical characteristics generated by device simulator DESSIS substitute for the measured ones. The methodology links the device simulator DESSIS and electrical simulator HSPICE and enables to extract parameter numerical values of HSPICE built-in bipolar transistor model. The individual steps to create bipolar transistor structure, generaate corresponding mesh, simulate device structure, convert electrical data from DESSIS to HSPICE, extract model parameter values and evaluate the results are described.

  • Czech name

    Bipolar transistor structure electrical characterization

  • Czech description

    The bipolar transistor model parameters extraction method based on device simulator generated electrical characteristics is presented. The forward active region electrical characteristics generated by device simulator DESSIS substitute for the measured ones. The methodology links the device simulator DESSIS and electrical simulator HSPICE and enables to extract parameter numerical values of HSPICE built-in bipolar transistor model. The individual steps to create bipolar transistor structure, generaate corresponding mesh, simulate device structure, convert electrical data from DESSIS to HSPICE, extract model parameter values and evaluate the results are described.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2005

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Socrates Workshop 2005, Intensive Training Programme in Electronic System Design - Proceedings

  • ISBN

    80-214-3042-7

  • ISSN

  • e-ISSN

  • Number of pages

    5

  • Pages from-to

    63-67

  • Publisher name

    Nakl. Novotný

  • Place of publication

    Brno

  • Event location

    Chania, Crete, Greece

  • Event date

    Sep 21, 2005

  • Type of event by nationality

    CST - Celostátní akce

  • UT code for WoS article