PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F01%3APU23912" target="_blank" >RIV/00216305:26220/01:PU23912 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes
Original language description
Random two-level or multiple-level current impulses may occur in electronic devices containing re-verse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, fea-turing constant amplitude, random pulse width and pulseorigin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hhas been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability den-sity w(0) of the impulse separation 0 and the probability density w(1) of the impulse width 1 have exponential courses. The power spectral density of the noise current is of a G-R process type and de-pends on the particular microplasma properties. From the viewpoint of noise di
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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