Reverse Biased P-N Junction Noise in GaAsP Diodes with Avalanche Breakdown Induced Microplasmas

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F02%3APU30677" target="_blank" >RIV/00216305:26220/02:PU30677 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Reverse Biased P-N Junction Noise in GaAsP Diodes with Avalanche Breakdown Induced Microplasmas

Original language description

Random two-level or multiple-level current impulses may occur in electronic devices containing reverse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, featuring constant amplitude, random pulse width and pulse origin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hass been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability density w(t0) of the impulse separation t0 and the probability density w(t1) of the impulse width t1 have exponential courses. The power spectral density of the noise current is of a G-R process type and depends on the particular microplasma properties. From the viewpoint of noise diagnostics, the most important fe

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Fluctuation and Noise Letters

ISSN

0219-4775

e-ISSN

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Volume of the periodical

2

Issue of the periodical within the volume

2

Country of publishing house

SG - SINGAPORE

Number of pages

6

Pages from-to

65-70

UT code for WoS article

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EID of the result in the Scopus database

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