Evaluation of Ni/n-SiC ohmic contacts by current noise measurements
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F01%3APU23959" target="_blank" >RIV/00216305:26220/01:PU23959 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Evaluation of Ni/n-SiC ohmic contacts by current noise measurements
Original language description
Ohmic contacts were prepared on the Si surface of the wide band gap semiconductor n-SiC etched by Ar ECR plasma and low-frequency current-noise characteristics of ohmic contacts were investigated.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ME%20285" target="_blank" >ME 285: Development of Advanced Devices for Global Communication</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 16th Int Conf Noise in Physical Systems and 1/f Fluctuations ICNF 2001
ISBN
981-02-4677-3
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
119-122
Publisher name
World Scientific
Place of publication
Gainesville, USA
Event location
Gainesville Florida USA
Event date
Oct 22, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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