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Noise in Passive Components - Resistors and Capacitors

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F02%3APU52211" target="_blank" >RIV/00216305:26220/02:PU52211 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Noise in Passive Components - Resistors and Capacitors

  • Original language description

    The noise spectroscopy and non-linearity measurement of thick film resistors and tantalum and niobium capacitors is proposed as a non-destructive testing tool for quality and reliability prediction. The correlation between long-term stability and currentnoise and third harmonic index of thick film resistors prepared using two different technologies was investigated. The charge carrier transport and noise analysis of Ta2O5 and Nb2O5 dielectric layer capacitors was performed to find correlation between lleakage current and noise based quality indicators and optimize aging procedure

  • Czech name

    Šum v pasivních součástkách - odporech a kondenzátorech

  • Czech description

    The noise spectroscopy and non-linearity measurement of thick film resistors and tantalum and niobium capacitors is proposed as a non-destructive testing tool for quality and reliability prediction. The correlation between long-term stability and currentnoise and third harmonic index of thick film resistors prepared using two different technologies was investigated. The charge carrier transport and noise analysis of Ta2O5 and Nb2O5 dielectric layer capacitors was performed to find correlation between lleakage current and noise based quality indicators and optimize aging procedure

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2002

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings of the 13th Symposium on Advanced Materials

  • ISBN

  • ISSN

  • e-ISSN

  • Number of pages

    6

  • Pages from-to

    110-115

  • Publisher name

    Meisei University

  • Place of publication

    Tokio

  • Event location

    Meisei University, Tokyo, Japan

  • Event date

    Nov 16, 2002

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article