Failure model of MOS transistors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39446" target="_blank" >RIV/00216305:26220/03:PU39446 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Failure model of MOS transistors
Original language description
Effects of gate-oxide failures on the operation of MOS transistor and describes the models of gate-oxide shorts (GOS) in n-channel and p-channel MOS transistors and simulation of circuits with these models.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F03%2F0721" target="_blank" >GA102/03/0721: Design methodology for analogue integrated circuits in new technologies</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of EDS 2003 Electronic Devices and Systems Conference
ISBN
80-214-2452-4
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
234-238
Publisher name
Nakl. Ing. Z. Novotný
Place of publication
Brno
Event location
Brno
Event date
Sep 9, 2003
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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