Low Frequency Noise of Nb2O5 Thin Insulating Films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU40385" target="_blank" >RIV/00216305:26220/03:PU40385 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Low Frequency Noise of Nb2O5 Thin Insulating Films
Original language description
A low frequency noise and charge carriers transport mechanism analysis have been performed on Nb - Nb2 O5 structures of various thickness to determine the mechanism of current flow and current noise sources. At low applied voltage and room temperature the charge carrier flow give thermally excited electrons hopping from one isolated state to the next. This mechanism yields an ohmic characteristic, exponentially dependent on temperature. At high fields and room temperature the rate limiting steps inn thecurrent flow is field-enhanced thermal excitation of trapped electrons into the conduction band. This process is known as Poole-Frenkel effect. In this case the barriers on electrodes determine the current value. Noise spectral density in low frequencyrange may be considered as superposition of 1/fa noise, burst noise, shot noise and thermal noise. Fluctuation of polarisation and fluctuation of mechanical strain may cause another kind of noise, which may be of importance. Last is the c
Czech name
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Czech description
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Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 17th International Nonference Noise and Fluctuations ICNF 2003
ISBN
80-239-1005-1
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
141-144
Publisher name
CNRL s.r.o.
Place of publication
Czech Republic
Event location
Praha
Event date
Aug 18, 2003
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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