Noise and Carge Storage in Nb2O5 Thin Films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU52183" target="_blank" >RIV/00216305:26220/05:PU52183 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Noise and Carge Storage in Nb2O5 Thin Films
Original language description
A low frequency noise and DC leakage current measurements have been performed on the MIS structure NbO - Nb2O5 - MnO2. The mechanism of current flow and current noise sources were determined from these measurements. The insulating layer thickness is 50 to 150 nm, relative permittivity about 38. The charge is accumulated not only on NbO and MnO2 electrodes, but also in the Nb2O5 insulating layer. The charge carrier transport is determined by the Poole-Frenkel mechanism and tunnelling in the normal mode ((for NbO electrode positive). In this case g-r noise is dominant for Poole-Frenkel mechanism and 1/f noise is dominant for tunnelling.
Czech name
Noise and Carge Storage in Nb2O5 Thin Films
Czech description
A low frequency noise and DC leakage current measurements have been performed on the MIS structure NbO - Nb2O5 - MnO2. The mechanism of current flow and current noise sources were determined from these measurements. The insulating layer thickness is 50 to 150 nm, relative permittivity about 38. The charge is accumulated not only on NbO and MnO2 electrodes, but also in the Nb2O5 insulating layer. The charge carrier transport is determined by the Poole-Frenkel mechanism and tunnelling in the normal mode ((for NbO electrode positive). In this case g-r noise is dominant for Poole-Frenkel mechanism and 1/f noise is dominant for tunnelling.

Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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