Scanning near-field optical microscopy and its application in semiconductor investigation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU42255" target="_blank" >RIV/00216305:26220/04:PU42255 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Scanning near-field optical microscopy and its application in semiconductor investigation
Original language description
Scanning near-field optical microscopy (SNOM) opened a new era in optical microscopy, bringing the spatial resolution at the 50-100 nm level using visible or near infrared light. This resolution is well below the diffraction limit of light and allows toovercome the restrictions of classical (far-field) optical techniques. With the development of small-aperture optical fiber probes or apertureless probes, sub-wavelength resolutions were achieved. The single capability of SNOM to simultaneously measure surface topography and local optical and electronic properties, thereby eliminating the need to perform cross correlation analysis on results obtained using different techniques, is particularly useful in this area. Several applications to the characterization of semiconductor, where SNOM techniques make possible a direct access to nondestructive, non-contact spectroscopic investigation of the structures, will be discussed. The advantages and drawbacks of SNOM in each application will be
Czech name
Rastrovací optická mikroskopie v blíykém poli a její aplikace v polvodičovém výzkumu
Czech description
Rastrovací optická mikroskopie v blízkém poli(SNOM) otevřela novou éru optické mikroskopie royzlišením 50-100 nm. Pomocí tohoto mikroskopu je možné současně topografii a lokální optické a elektronové vlastnosti, čímž se vyloučí nutnost korelační analýzyvýsledků. V článku budou diskutovány některé z aplikací SNOM ve spektroskopii, včetně předností a nedostatků.
Classification
Type
D - Article in proceedings
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ME%20544" target="_blank" >ME 544: Semiconductors - local optical and electrical properties</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Scanning probe microscopy 2004
ISBN
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ISSN
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e-ISSN
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Number of pages
4
Pages from-to
108-111
Publisher name
Institute for Physics of Microsctructures RAS
Place of publication
Nizhny Novgorod
Event location
Nizhny Novgorod
Event date
May 2, 2004
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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