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Scanning near-field optical microscopy and its application in semiconductor investigation

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU42255" target="_blank" >RIV/00216305:26220/04:PU42255 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Scanning near-field optical microscopy and its application in semiconductor investigation

  • Original language description

    Scanning near-field optical microscopy (SNOM) opened a new era in optical microscopy, bringing the spatial resolution at the 50-100 nm level using visible or near infrared light. This resolution is well below the diffraction limit of light and allows toovercome the restrictions of classical (far-field) optical techniques. With the development of small-aperture optical fiber probes or apertureless probes, sub-wavelength resolutions were achieved. The single capability of SNOM to simultaneously measure surface topography and local optical and electronic properties, thereby eliminating the need to perform cross correlation analysis on results obtained using different techniques, is particularly useful in this area. Several applications to the characterization of semiconductor, where SNOM techniques make possible a direct access to nondestructive, non-contact spectroscopic investigation of the structures, will be discussed. The advantages and drawbacks of SNOM in each application will be

  • Czech name

    Rastrovací optická mikroskopie v blíykém poli a její aplikace v polvodičovém výzkumu

  • Czech description

    Rastrovací optická mikroskopie v blízkém poli(SNOM) otevřela novou éru optické mikroskopie royzlišením 50-100 nm. Pomocí tohoto mikroskopu je možné současně topografii a lokální optické a elektronové vlastnosti, čímž se vyloučí nutnost korelační analýzyvýsledků. V článku budou diskutovány některé z aplikací SNOM ve spektroskopii, včetně předností a nedostatků.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BH - Optics, masers and lasers

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ME%20544" target="_blank" >ME 544: Semiconductors - local optical and electrical properties</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2004

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Scanning probe microscopy 2004

  • ISBN

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    108-111

  • Publisher name

    Institute for Physics of Microsctructures RAS

  • Place of publication

    Nizhny Novgorod

  • Event location

    Nizhny Novgorod

  • Event date

    May 2, 2004

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article