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Local photoluminescence measurements of semiconductor surface defects

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU43759" target="_blank" >RIV/00216305:26220/04:PU43759 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Local photoluminescence measurements of semiconductor surface defects

  • Original language description

    The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methoods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough newcapabilities to assure its application.

  • Czech name

    Lokální měření fotoluminiscence defektů polovodičového povrchu

  • Czech description

    Článek ukazuje, jak může být SNOM použit na charakterizování polovodičů s kvantovými jámami. Nekteré optické charakterizační metody, které jsou značně používány ve vzdáleném poli, jako jsou odrazivost, spektroskopie diferenční odrazivosti, životnost nosičů jsou zkoumány z hlediska blízkého pole používajího SNOM. Pro některé těchto technik jsou prezentována experimentální data.

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ME%20544" target="_blank" >ME 544: Semiconductors - local optical and electrical properties</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2004

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Proceedings of SPIE

  • ISSN

    0277-786X

  • e-ISSN

  • Volume of the periodical

    NEUVEDEN

  • Issue of the periodical within the volume

    5477

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    7

  • Pages from-to

    131-137

  • UT code for WoS article

  • EID of the result in the Scopus database