Local photoluminescence measurements of semiconductor surface defects
Result description
The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methoods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough newcapabilities to assure its application.
Keywords
Spectroscopynear field opticsSNOMlocal photoluminescencesemiconductorsurfacedefects
The result's identifiers
Result code in IS VaVaI
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Local photoluminescence measurements of semiconductor surface defects
Original language description
The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methoods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough newcapabilities to assure its application.
Czech name
Lokální měření fotoluminiscence defektů polovodičového povrchu
Czech description
Článek ukazuje, jak může být SNOM použit na charakterizování polovodičů s kvantovými jámami. Nekteré optické charakterizační metody, které jsou značně používány ve vzdáleném poli, jako jsou odrazivost, spektroskopie diferenční odrazivosti, životnost nosičů jsou zkoumány z hlediska blízkého pole používajího SNOM. Pro některé těchto technik jsou prezentována experimentální data.
Classification
Type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
ME 544: Semiconductors - local optical and electrical properties
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Proceedings of SPIE
ISSN
0277-786X
e-ISSN
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Volume of the periodical
NEUVEDEN
Issue of the periodical within the volume
5477
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
131-137
UT code for WoS article
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EID of the result in the Scopus database
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Basic information
Result type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP
JA - Electronics and optoelectronics
Year of implementation
2004