Non-linearity and noise characterisation of thick-film resistors after high voltage stress

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU45391" target="_blank" >RIV/00216305:26220/04:PU45391 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Non-linearity and noise characterisation of thick-film resistors after high voltage stress

Original language description

Experimental investigation on cermet thick film resistors shows, that non-linearity and 1/f noise spectral density is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and noise spectrral voltage density were measured before and after high voltage stress. Two mechanisms were observed. (i) Sample resistance, non-linearity and noise decreases after high voltage stressing. We suppose, that the effect of resistance, non-linearity and noise lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance, non-linearity and noise increases after high voltage stressing. We suppose tha

Czech name

Vyhodnocení kvality tlustovrstvových odporů pomocí měření šumu a nelinearity po namáhání vysokonapěťovým pulsem

Czech description

Experimental investigation on cermet thick film resistors shows, that non-linearity and 1/f noise spectral density is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and noise spectrral voltage density were measured before and after high voltage stress. Two mechanisms were observed. (i) Sample resistance, non-linearity and noise decreases after high voltage stressing. We suppose, that the effect of resistance, non-linearity and noise lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance, non-linearity and noise increases after high voltage stressing. We suppose tha

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/ME%20605" target="_blank" >ME 605: Noise of HEMT for global communication</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2004

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of the 3rd European Microelectronics and Packaging Symposium with Table Top Exhibition

ISBN

80-239-2835-X

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

421-426

Publisher name

IMAPS CZ&SK Chapter

Place of publication

Lanskroun

Event location

Prague

Event date

Jun 16, 2004

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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