Thick film resistor characterisation by non-linearity and resistance change after high voltage stress
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU45408" target="_blank" >RIV/00216305:26220/04:PU45408 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Thick film resistor characterisation by non-linearity and resistance change after high voltage stress
Original language description
Experimental investigation on cermet thick film resistors shows, that non-linearity and resistance is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and resistance were measured beffore and after high voltage stress. Three mechanisms were observed. (i) Sample resistance and non-linearity decreases after high voltage stressing. We suppose, that the effect of resistance and non-linearity lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance and non-linearity increases after high voltage stressing. We suppose that in this case some conducting chains are destroyed bec
Czech name
Vyhodnocení kvality tlustovrstvových odporů pomocí měření změny nelinearity a odporu po namáhání vysokonapěťovým pulsem
Czech description
Experimental investigation on cermet thick film resistors shows, that non-linearity and resistance is changed after high voltage stressing. Stressing method is based on the short current pulse from capacitor discharge. In the thick film resistor the current is flying through conductive chains composed of conducting grains and filaments separated by thin insulating layer. It is supposed, that multi-spot contact is created between contact and resistive layer. Non-linearity and resistance were measured beffore and after high voltage stress. Three mechanisms were observed. (i) Sample resistance and non-linearity decreases after high voltage stressing. We suppose, that the effect of resistance and non-linearity lowering is caused by filaments fritting. During this process thin isolating film between metallic grains is either doped or shorted. (ii) Sample resistance and non-linearity increases after high voltage stressing. We suppose that in this case some conducting chains are destroyed bec
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ME%20605" target="_blank" >ME 605: Noise of HEMT for global communication</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
New Trends in Physics - Proceedings of the Conference
ISBN
80-7355-024-5
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
88-91
Publisher name
Department of Physics FEEC, Brno University of Technology
Place of publication
Brno
Event location
Brno
Event date
Nov 11, 2004
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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