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Non-lineartiy changes induced by current stress in thick film resistors

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU45416" target="_blank" >RIV/00216305:26220/04:PU45416 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Non-lineartiy changes induced by current stress in thick film resistors

  • Original language description

    Non-linearity measurements are widely used for quality and reliability testing of passive components. The main non-linearity sources in the ruthenium based thick film resistors are the transitions between conducting grains in the resistive paste volume,and the defects and cracks in the resistive layer and resistor/contact interface. The third harmonic voltage measurements are offered to investigate the effect of the degradation mechanism in thick film resistors after high current pulses. We applied to the resistors three short current pulses (t = 5 ms) with current density Jmax reaching 100times value of nominal current density JNom. This is sufficient to screen unstable devices. Third harmonic voltage (THV) and resistance were measured before and after the pulse stressing. We have found good correlation between relative change of THV and relative change of resistance, however THV measurements are about 5 times more sensitive. THV change after pulse stressing is proportional to the num

  • Czech name

    Změna nelinearity způsobená proudovým namáháním v tlustovrstvových odporech

  • Czech description

    Non-linearity measurements are widely used for quality and reliability testing of passive components. The main non-linearity sources in the ruthenium based thick film resistors are the transitions between conducting grains in the resistive paste volume,and the defects and cracks in the resistive layer and resistor/contact interface. The third harmonic voltage measurements are offered to investigate the effect of the degradation mechanism in thick film resistors after high current pulses. We applied to the resistors three short current pulses (t = 5 ms) with current density Jmax reaching 100times value of nominal current density JNom. This is sufficient to screen unstable devices. Third harmonic voltage (THV) and resistance were measured before and after the pulse stressing. We have found good correlation between relative change of THV and relative change of resistance, however THV measurements are about 5 times more sensitive. THV change after pulse stressing is proportional to the num

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ME%20605" target="_blank" >ME 605: Noise of HEMT for global communication</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2004

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Capacitor and Resistor Technology

  • ISSN

    0887-7491

  • e-ISSN

  • Volume of the periodical

    2004

  • Issue of the periodical within the volume

    24

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    5

  • Pages from-to

    154-158

  • UT code for WoS article

  • EID of the result in the Scopus database