Diagnostics of PN Junction Electronic Devices by Means of Microplasma Noise Evaluation

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU51475" target="_blank" >RIV/00216305:26220/05:PU51475 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Diagnostics of PN Junction Electronic Devices by Means of Microplasma Noise Evaluation

Original language description

In a semiconductor PN junction there are localized regions featuring increased concentration of donor or acceptor impurities or other defects, which cause the PN junction reverse breakdown voltage to be reduced. They can be displayed when picking up thereverse current waveforms at varying reverse voltage or by measuring the U-I characteristics of a PN junction powered from a constant current supply. Below the homogeneous breakdown region, the PN junction reverse current is, in principle, due to the loccal defect-assisted current conduction only. These areas are particularly critical for the application of high-power rectifier diodes, which are operated at very high reverse voltages continuously. The goal of the present method consists in completing both theoretical and experimental study of statistic and transport characteristics of selected PN junction semiconductor devices in their local instability regions (micro-plasma occurrence regions) and, based on this study, to design a meth

Czech name

Diagnostika součástek obsahujících PN přechod pomocí šumu mikroplazmy

Czech description

In a semiconductor PN junction there are localized regions featuring increased concentration of donor or acceptor impurities or other defects, which cause the PN junction reverse breakdown voltage to be reduced. They can be displayed when picking up thereverse current waveforms at varying reverse voltage or by measuring the U-I characteristics of a PN junction powered from a constant current supply. Below the homogeneous breakdown region, the PN junction reverse current is, in principle, due to the loccal defect-assisted current conduction only. These areas are particularly critical for the application of high-power rectifier diodes, which are operated at very high reverse voltages continuously. The goal of the present method consists in completing both theoretical and experimental study of statistic and transport characteristics of selected PN junction semiconductor devices in their local instability regions (micro-plasma occurrence regions) and, based on this study, to design a meth

Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2005

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proocedings of International Workshop Physical and Material Engineering 2005

ISBN

80-01-03290-6

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

63-68

Publisher name

České vysoké učení technické v Praze

Place of publication

Praha

Event location

Prague

Event date

Sep 12, 2005

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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