Methods of photovoltaic solar cells surface passivation.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU51938" target="_blank" >RIV/00216305:26220/05:PU51938 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

čeština

Original language name

Metody pasivace povrchů fotovoltaických solárních článků.

Original language description

When talking about surface passivation techniques of photovoltaic solar cells silicon nitrid (SiN) is the most widely used material. One important feature of this is the thermal stability during the deposition. Another improvement of this parameter is possible by utilization of own substrate on which the SiO2 layer is created. Two methods of surface passivation will be described in this article. The first Plasma-Enhanced Chemical-Vapour Deposition system used for SiN deposition and the second creattingthermally grown oxid on Si surface will be disscussed. There will be shown that very good thermal stability is possible by combination of both SiN and SiO2. Due to this the recombination in all the volume and on the Si surface is reduced. This leads to higher efficiency of solar cell itself.

Czech name

Metody pasivace povrchů fotovoltaických solárních článků.

Czech description

When talking about surface passivation techniques of photovoltaic solar cells silicon nitrid (SiN) is the most widely used material. One important feature of this is the thermal stability during the deposition. Another improvement of this parameter is possible by utilization of own substrate on which the SiO2 layer is created. Two methods of surface passivation will be described in this article. The first Plasma-Enhanced Chemical-Vapour Deposition system used for SiN deposition and the second creattingthermally grown oxid on Si surface will be disscussed. There will be shown that very good thermal stability is possible by combination of both SiN and SiO2. Due to this the recombination in all the volume and on the Si surface is reduced. This leads to higher efficiency of solar cell itself.

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2005

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Elektrotechnika a informatika 2005

ISBN

80-7043-375-2

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

11-14

Publisher name

Fakulta elektrotechnická, Západočeská univerzita v Plzni

Place of publication

Plzeň

Event location

Nečtiny

Event date

Nov 2, 2005

Type of event by nationality

CST - Celostátní akce

UT code for WoS article

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