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Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU52188" target="_blank" >RIV/00216305:26220/05:PU52188 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

  • Original language description

    An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.

  • Czech name

    Kondenzátory na bázi tantalu a oxidu niobu: porovnání parametrů M-I-S modelu

  • Czech description

    An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2005

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Capacitor and Resistor Technology

  • ISSN

    0887-7491

  • e-ISSN

  • Volume of the periodical

    2005

  • Issue of the periodical within the volume

    3

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    5

  • Pages from-to

    244-248

  • UT code for WoS article

  • EID of the result in the Scopus database