Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU52188" target="_blank" >RIV/00216305:26220/05:PU52188 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison
Original language description
An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.
Czech name
Kondenzátory na bázi tantalu a oxidu niobu: porovnání parametrů M-I-S modelu
Czech description
An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Capacitor and Resistor Technology
ISSN
0887-7491
e-ISSN
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Volume of the periodical
2005
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
244-248
UT code for WoS article
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EID of the result in the Scopus database
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