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Deposition of SiNx and SiO2 passivation layers.

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU54017" target="_blank" >RIV/00216305:26220/05:PU54017 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    čeština

  • Original language name

    Depozice pasivačních vrstev SiNx a SiO2.

  • Original language description

    In the semiconductor and photovoltaic application, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centers that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition).. In this paper, deposition of the passivation layers by means of reactive magnetron sputtering is dealt.

  • Czech name

    Depozice pasivačních vrstev SiNx a SiO2.

  • Czech description

    In the semiconductor and photovoltaic application, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centers that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition).. In this paper, deposition of the passivation layers by means of reactive magnetron sputtering is dealt.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2005

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Mikrosyn. Nové trendy v mikroelektronických systémech a nanotechnologiích

  • ISBN

    80-214-3116-4

  • ISSN

  • e-ISSN

  • Number of pages

    6

  • Pages from-to

    111-116

  • Publisher name

    nakl. Z. Novotný

  • Place of publication

    Brno

  • Event location

    Brno

  • Event date

    Dec 12, 2005

  • Type of event by nationality

    CST - Celostátní akce

  • UT code for WoS article