Deposition of SiNx and SiO2 passivation layers.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F05%3APU54017" target="_blank" >RIV/00216305:26220/05:PU54017 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
čeština
Original language name
Depozice pasivačních vrstev SiNx a SiO2.
Original language description
In the semiconductor and photovoltaic application, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centers that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition).. In this paper, deposition of the passivation layers by means of reactive magnetron sputtering is dealt.
Czech name
Depozice pasivačních vrstev SiNx a SiO2.
Czech description
In the semiconductor and photovoltaic application, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centers that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition).. In this paper, deposition of the passivation layers by means of reactive magnetron sputtering is dealt.
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Mikrosyn. Nové trendy v mikroelektronických systémech a nanotechnologiích
ISBN
80-214-3116-4
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
111-116
Publisher name
nakl. Z. Novotný
Place of publication
Brno
Event location
Brno
Event date
Dec 12, 2005
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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