Nonlinear On-chip Capacitor Characterization

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F07%3APU68100" target="_blank" >RIV/00216305:26220/07:PU68100 - isvavai.cz</a>
Alternative codes found
RIV/60162694:G43__/07:#0001049
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Nonlinear On-chip Capacitor Characterization
Original language description
The paper deals with a modification of the CBCM method for nonlinear on-chip capacitance characterization. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. A test-chip implementing the method was designed and manufactured in 0.35um CMOS process. Verification against known capacitances proved the method correctness and accuracy. It was used for MOSCAPs characterization in full operating voltage range.
Czech name
Charakterizace nelineárních kapacitorů na čipu
Czech description
Článek pojednává o charakterizaci nelineárních kapacitorů na čipu.

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 18th European Conference on Circuit Theory and Design ECCTD'07
ISBN
1-4244-1342-7
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
220-223
Publisher name
IEEE
Place of publication
Sevilla, Spain
Event location
Sevilla, Spain
Event date
Aug 26, 2007
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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