The Effect of Contacts Metal - Semiconductor on Low Frequency Noise

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F07%3APU68642" target="_blank" >RIV/00216305:26220/07:PU68642 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
The Effect of Contacts Metal - Semiconductor on Low Frequency Noise
Original language description
Flicker noise of CdTe radiation detectors was measured and analyzed. Two CdTe detectors were used for the measurements. Both detectors have p-type conductivity. One of them has low-ohmic contacts (F33B8), another one have high-ohmic contact (452D). The value of flicker noise for both detectors was much higher than theoretical value for CdTe single crystals. It was suggested that the contact area was the source of extra high low frequency noise value. This paper shows the analysis of this possibility
Czech name
The Effect of Contacts Metal - Semiconductor on Low Frequency Noise
Czech description
Flicker noise of CdTe radiation detectors was measured and analyzed. Two CdTe detectors were used for the measurements. Both detectors have p-type conductivity. One of them has low-ohmic contacts (F33B8), another one have high-ohmic contact (452D). The value of flicker noise for both detectors was much higher than theoretical value for CdTe single crystals. It was suggested that the contact area was the source of extra high low frequency noise value. This paper shows the analysis of this possibility

Project
<a href="/en/project/GA102%2F07%2F0113" target="_blank" >GA102/07/0113: Noise as Diagnostic Tool for Schottky and Could Electron Emission Cathodes</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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