RTS Noise and quantum transitions in submicron MOSFETs

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F07%3APU70493" target="_blank" >RIV/00216305:26220/07:PU70493 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

RTS Noise and quantum transitions in submicron MOSFETs

Original language description

We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states andtraps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are comparedto experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.

Czech name

RTS šum a kvantové přechody v submikronových součástkách MOSFET

Czech description

We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states andtraps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are comparedto experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F05%2F2095" target="_blank" >GA102/05/2095: Noise sources in semiconductor materials and devices</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2007

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

New Trends in Physics

ISBN

978-80-7355-078-3

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

138-141

Publisher name

VUT

Place of publication

Brno

Event location

Brno

Event date

Nov 15, 2007

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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