RTS Noise and quantum transitions in submicron MOSFETs
Result description
We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states andtraps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are comparedto experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.
Keywords
The result's identifiers
Result code in IS VaVaI
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
RTS Noise and quantum transitions in submicron MOSFETs
Original language description
We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states andtraps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are comparedto experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.
Czech name
RTS šum a kvantové přechody v submikronových součástkách MOSFET
Czech description
We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states andtraps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are comparedto experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
GA102/05/2095: Noise sources in semiconductor materials and devices
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
New Trends in Physics
ISBN
978-80-7355-078-3
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
138-141
Publisher name
VUT
Place of publication
Brno
Event location
Brno
Event date
Nov 15, 2007
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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Basic information
Result type
D - Article in proceedings
CEP
JA - Electronics and optoelectronics
Year of implementation
2007