Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU86944" target="_blank" >RIV/00216305:26220/10:PU86944 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Electron Density, RTS Noise and Temperature Measurement of Submicron MOSFETs
Original language description
We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states andtraps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are comparedto experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.
Czech name
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Czech description
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Project
<a href="/en/project/GD102%2F09%2FH074" target="_blank" >GD102/09/H074: Diagnostics of material defects using the latest defectoscopic methods</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Polymer Electronics and Nanotechnologies: towards System Integration
ISBN
978-83-7207-874-2
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
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Publisher name
Piotr Firek, Ryszard Kisiel
Place of publication
Koszykowa 75 00 662 Warsaw Poland
Event location
Kyoto
Event date
Aug 1, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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