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Modeling of Microwave Semiconductor Diodes

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU75945" target="_blank" >RIV/00216305:26220/08:PU75945 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Modeling of Microwave Semiconductor Diodes

  • Original language description

    The paper deals with the multi-physical modeling of the microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equations are summarized, and modeling issues are discussed. The simulation of the Gunn effect in transferred electron devices and carrier injection effect in PIN diodes are the aim of investigation and discussion. The analysis was performed in COMSOL Multiphysics computing environment using finite element method.

  • Czech name

    Modelování mikrovlnných polovodičových diod

  • Czech description

    Článek se zabývá multifyzikálními modely mikrovlnných diod. Modely prvků zahrnují vlivy elektrostatiky, tepelných účinků a driftu-difuze nosičů náboje. Jsou zde shrnuty základní rovnice pro fyziku polovodičů a diskutovány otázky vytváření modelů polovodičových struktur. Cílem jsou simulace Gunnova efektu Gunnovy diody a carrier-injection efektu PIN diody. Analýza byla provedena metodou konečných prvků v programu COMSOL Multiphysic.

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2008

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Radioengineering

  • ISSN

    1210-2512

  • e-ISSN

  • Volume of the periodical

    17

  • Issue of the periodical within the volume

    3

  • Country of publishing house

    CZ - CZECH REPUBLIC

  • Number of pages

    6

  • Pages from-to

  • UT code for WoS article

  • EID of the result in the Scopus database