Investigation of Flicker Noise in Silicon Diodes under Reverse Bias

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00169303" target="_blank" >RIV/68407700:21230/10:00169303 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Investigation of Flicker Noise in Silicon Diodes under Reverse Bias

Original language description

This article analyses some connections between reverse properties of silicon power diodes and their flicker noise under reverse bias. Common (connecting) aspect of these different angles of view is technological production process. The article presents asimple physical model describing a behavior and effect of surface structural defects in connection with a reverse and noise properties of tested diodes. Model defines and consequently performs mutual relations with respect to physical nature of the investigated defects. An interesting output of the model is the possibility to identify energy level and density of investigated defects.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

ISPS'10 PROCEEDINGS

ISBN

978-80-01-04602-9

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

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Publisher name

České vysoké učení technické v Praze

Place of publication

Praha

Event location

Praha

Event date

Sep 1, 2010

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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