Influence of surface states on the reverse and noise properties of silicon power diodes
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00217727" target="_blank" >RIV/68407700:21230/14:00217727 - isvavai.cz</a>
Result on the web
<a href="http://digital-library.theiet.org/content/journals/10.1049/iet-cds.2013.0219" target="_blank" >http://digital-library.theiet.org/content/journals/10.1049/iet-cds.2013.0219</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1049/iet-cds.2013.0219" target="_blank" >10.1049/iet-cds.2013.0219</a>
Alternative languages
Result language
angličtina
Original language name
Influence of surface states on the reverse and noise properties of silicon power diodes
Original language description
This contribution investigates transient degradation of reverse characteristics of diodes by means of a noise measurement. This effect appears immediately after external heating or after a long time on-state polarisation of diodes (without a significanttemperature growth of the device in this case). Simultaneously with the reverse characteristics degradation, the noise power measured under a low voltage DC reverse bias is influenced. The first possible cause of these effects is connected with so calledslow surface states (SSS). The SSS are caused by the presence of material process induced defects in the region of a p-n junction surface termination. SSS have fundamental impact on the reverse properties of diodes and their low frequency noise behaviour. The second cause is connected with so called volume structural defects (VSD). Their origin can be genetic (e.g. the presence of imperfection inside a silicon crystal) or they can be induced during technological processing. These defect
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
N - Vyzkumna aktivita podporovana z neverejnych zdroju
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IET Circuits, Devices & Systems
ISSN
1751-858X
e-ISSN
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Volume of the periodical
8
Issue of the periodical within the volume
3
Country of publishing house
GB - UNITED KINGDOM
Number of pages
8
Pages from-to
213-220
UT code for WoS article
000337942500009
EID of the result in the Scopus database
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