Influence of surface states on reverse and noise properties of silicon

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F12%3A00194511" target="_blank" >RIV/68407700:21230/12:00194511 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Influence of surface states on reverse and noise properties of silicon
Original language description
This contribution investigates transient degradation of reverse characteristics of diodes. This effect appears immediately after external heating or after a long time on-state polarization of diodes (without significant temperature growth of the device in this case). Simultaneously with the reverse characteristics degradation, the noise power (measured under low voltage reverse bias) is influenced. Common factor (which acts on both reverse and noise properties of diodes) is connected with so called surface states. The slow surface states (SSS) are caused by presence of material process induced defects in the region of p-n junction surface termination. SSS have fundamental impact on reverse properties of diodes and their low frequency noise behavior. The kinetics of processes evoked by temperature heating of diodes is described in former study. Presented article extends interest also on changes induced by on-state polarization of diodes. Inherent connection between SSS on semiconductor-
Czech name
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Czech description
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Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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